AP63300/AP63301

Document number: DS42002 Rev. 3 - 2

6 of 22

www.diodes.com

August 2019

© Diodes Incorporated

AP63300/AP63301

Electrical Characteristics (At TA = +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended

ambient temperature range, -40°C to +85°C, and input voltage range, 3.8V to 32V, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISHDN

Shutdown Supply Current

VEN = 0V

—

1

3

μA

IQ

Supply Current (Quiescent)

AP63300:

VEN = Floating, VFB = 1.0V

—

22

—

μA

AP63301:

VEN = Floating, VFB = 1.0V

—

280

—

μA

UVLO

VIN Undervoltage Rising Threshold

—

—

3.5

3.7

V

VIN Undervoltage Hysteresis

—

—

440

—

mV

RDS(ON)1

High-Side Power MOSFET On-Resistance (Note 8)

—

—

75

—

mΩ

RDS(ON)2

Low-Side Power MOSFET On-Resistance (Note 8)

—

—

40

—

mΩ

IPEAK_LIMIT

HS Peak Current Limit (Note 8)

—

4.1

4.5

4.9

A

IVALLEY_LIMIT

LS Valley Current Limit (Note 8)

—

—

4.0

—

A

IPFMPK

PFM Peak Current Limit

—

—

930

—

mA

IZC

Zero Cross Current Threshold

—

—

60

—

mA

fSW

Oscillator Frequency

—

450

500

550

kHz

tON_MIN

Minimum On-Time

—

—

80

—

ns

VFB

Feedback Voltage

CCM

792

800

808

mV

VEN_H

EN Logic High

—

—

1.18

1.25

V

VEN_L

EN Logic Low

—

1.03

1.09

—

V

IEN

EN Input Current

VEN = 1.5V

—

5.5

—

μA

VEN = 1V

1

1.5

2

μA

tSS

Soft-Start Time

—

—

4

—

ms

TSD

Thermal Shutdown Threshold (Note 8)

—

—

160

—

°C

THys

Thermal Shutdown Hysteresis (Note 8)

—

—

25

—

°C

Note:

8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design.