AP65111

Document number: DS39153 Rev. 3 - 3

3 of 14

www.diodes.com

January 2018

© Diodes Incorporated

AP65111

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4)

Symbol

Parameter

Rating

Unit

VIN

Supply Voltage

-0.3 to 20

V

VSW

Switch Node Voltage

-1.0 to VIN +0.3

V

VBS

Bootstrap Voltage

VSW -0.3 to VSW +6.0

V

VFB

Feedback Voltage

-0.3V to +6.0

V

VEN

Enable/UVLO Voltage

-0.3V to +6.0

V

TST

Storage Temperature

-65 to +150

°C

TJ

Junction Temperature

+160

°C

TL

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

2

KV

CDM

Charged Device Model

1

KV

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Thermal Resistance (Note 6)

Symbol

Parameter

Rating

Unit

θJA

Junction to Ambient

TSOT26

120

°C/W

θJC

Junction to Case

TSOT26

30

°C/W

Note:

6. Test condition for SOT26: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) (Note 7)

Symbol

Parameter

Min

Max

Unit

VIN

Supply Voltage

6

16

V

TA

Operating Ambient Temperature Range

-40

+85

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.