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M66252P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M66252P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 11 page ![]() 1 MITSUBISHI 〈DIGITAL ASSP〉 M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) MITSUBISHI 〈DIGITAL ASSP〉 M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) PIN CONFIGURATION (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 13 19 18 17 20 21 22 23 24 Q0 Q1 Q2 Q3 GND RCK Q4 Q5 Q6 Q7 D0 D1 D2 D3 VCC WCK D4 D5 D6 D7 Data output Data output Data input Data input 24P4Y 24P2W-A Outline Read enable input Read reset input Read clock input Write enable input Write reset input Write clock input RE RRES WE WRES BLOCK DIAGRAM 24 23 22 21 16 15 14 13 Input buffer 1 234 9 10 11 12 Output buffer 20 19 17 18 Memory array (1152 x 8 bits) 5 6 8 7 RE RRES RCK GND WE WRES WCK Vcc Write enable input Write reset input Write clock input Read reset input Read enable input Read clock input D0 D1 D2 D3 D4 D5 D6 D7 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Data input Data output DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology. It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between devices with different data processing throughput. FEATURES • Memory construction ........................................................ ............................. 1152words x 8bits (dynamic memory) • High-speed cycle ............................................ 50ns (min.) • High-speed access ........................................ 40ns (max.) • Output hold ....................................................... 5ns (min.) • Fully independent, asynchronous write and read opera- tions • Variable-length delay bit • Output .................................................................... 3-state APPLICATION Digital photocopiers, high-speed facsimiles, laser beam print- ers. |
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