M66252P datasheet(2/11 Pages) MITSUBISHI

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MITSUBISHI

〈DIGITAL ASSP〉

M66252P/FP

1152 x 8-BIT LINE MEMORY (FIFO)

When read enable input RE is “L,” data on memory are out-

put to Q0 thru Q7 synchronously with read clock input RCK

rise edges. At this time, read address counter executes

counting.

The following read-related operations are also performed

synchronously with RCK rise edges.

When RE is “H,” reading from memory is inhibited, and read

address counter stops counting. The status of Q0 thru Q7 be-

comes high-impedance.

When read reset input RRES is “L,” read address counter is

initialized.

FUNCTION

When the status of write enable input WE is “L,” data on D0

thru D7 are written on the memory synchronously with write

clock input WCK rise edges. At this time, write address

counter executes counting.

The following write-related operations are also performed

synchronously with WCK rise edges.

When WE is “H,” writing on memory is inhibited, and write ad-

dress counter stops counting.

When write reset input WRES is “L,” write address counter is

initialized.

Conditions

Reference pin: GND

Ta = 25

°C

Ratings

–0.5 ~ +7.0

–0.5 ~ VCC + 0.5

550 (Note 1)

–65 ~ 150

Symbol

VCC

Tstg

Parameter

Supply voltage

Input voltage

Output voltage

Power dissipation

Storage temperature

Unit

°C

ABSOLUTE MAXIMUM RATINGS (Ta = –20 ~ 70

°C unless otherwise noted)

Note 1: Ta

≥ 62°C are derated at –8.8mW/°C (24P4Y)

≥ 51°C are derated at –7.5mW/°C (24P2W)

RECOMMENDED OPERATIONAL CONDITIONS

Symbol

VCC

GND

Topr

Parameter

Supply voltage

Ambient temperature

Limits

Min.

4.5

–20

Typ.

Max.

5.5

Unit

°C

Symbol

VIH

VIL

VOH

VOL

IIH

IIL

IOZH

IOZL

ICC

Parameter

“H” input voltage

“L” input voltage

“H” output voltage

“L” output voltage

“H” input current

“L” input current

“H” output current under “off” condition

“L” output current under “off” condition

Average supply current during operation

Input capacitance

Output capacitance under “off” condition

ELECTRICAL CHARACTERISTICS (Ta = –20 ~ 70

°C, VCC = 5V±10%, GND = 0V)

Max.

0.8

0.55

1.0

–1.0

5.0

–5.0

100

Unit

µA

Typ.

Min.

2.0

VCC – 0.8

Limits

Test conditions

IOH = –4mA

IOL = 4mA

VI = VCC

VI = GND

VO = VCC

VO = GND

VI = VIH, VIL, Outputs are open

tWCK, tRCK = 100ns

f = 1MHz

WE, WRES, WCK, RE,

RRES, RCK

D0~D7

WE, WRES, WCK, RE,

RRES, RCK

D0~D7

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