STF7N65M6 datasheet(6/13 Pages) STMICROELECTRONICS

Part #	STF7N65M6

Description	N-channel 650 V, 0.91 typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 13 page

Figure 7. Capacitance variations

GIPG290720161128CVR

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

V DS (V)

C ISS

C OSS

C RSS

f = 1 MHz

Figure 8. Normalized gate threshold voltage vs

temperature

GIPG290720161143VTH

1.1

0.9

0.8

0.7

0.6

-75

-25

125

V GS(th)

(norm.)

ID=250 µA

TJ (°C)

Figure 9. Normalized on-resistance vs temperature

GIPG290720161206RON

2.2

1.8

1.4

0.6

0.2

-75

-25

125

R DS(on)

(norm.)

V GS =10 V

Figure 10. Normalized V(BR)DSS vs temperature

GIPG290720161215BDV

1.08

1.04

0.96

0.92

0.88

-75

-25

125

V (BR)DSS

(norm.)

ID= 1 mA

Figure 11. Output capacitance stored energy

GIPG290720161227EOS

2.4

1.6

1.2

0.8

0.4

100 200 300 400 500 600

V DS (V)

(μJ)

Figure 12. Source-drain diode forward characteristics

GIPG290720161328SDF

1.1

0.9

0.8

0.7

0.6

0.5

V SD

(V)

I SD (A)

Tj = 50°C

Tj = 150 °C

Tj = 25 °C

STF7N65M6

Electrical characteristics (curves)

DS11822 - Rev 2

page 6/13

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