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STFU16N65M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STFU16N65M2 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 12 page ![]() STFU16N65M2 Electrical characteristics DocID030485 Rev 1 7/12 Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on-resistance vs. temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy VGS 4 2 0 4 12 Qg(nC) 8 (V) 0 16 6 8 10 20 VDS (V) 0 100 200 300 400 500 VDD = 520 V ID = 11 A VDS GIPD221020141708FSR C 10 1 0.1 1 100 VDS(V) 10 (pF) 0.1 100 1000 Ciss Coss Crss GIPD221020141716FSR VGS(th) 0.8 -75 -25 25 Tj(°C) (norm) 0.6 75 0.7 0.9 1.0 125 1.1 ID = 250 µ A GIPD180920141442FSR VSD 0.7 0 2 6 ISD(A) 4 (V) 0.5 8 0.6 0.8 0.9 Tj= 150°C Tj= -50°C Tj= 25°C 10 1 1.1 GIPD221020141733FSR E 1 0 100 300 VDS(V) 200 (µJ) 0 400 500 600 2 3 4 5 GIPD221020141721FSR |
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