STP12N65M2 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STP12N65M2

Description	N-channel 650 V, 0.42 typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

STP12N65M2

Electrical characteristics

DocID031324 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

ISDM(2)

Source-drain current

(pulsed)

VSD(3)

Forward on voltage

VGS = 0 V, ISD = 8 A

1.6

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

313

Qrr

Reverse recovery charge

2.7

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

462

Qrr

Reverse recovery charge

4.1

µC

IRRM

Reverse recovery current

17.5

Notes:

(1)Limited by package.

(2) Pulse width is limited by safe operating area.

(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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