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STP30N65DM6AG Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP30N65DM6AG
Description  Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a TO-220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP30N65DM6AG Datasheet(HTML) 1 Page - STMicroelectronics

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1
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TO-220
TAB
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STP30N65DM6AG
650 V
115 mΩ
28 A
•
AEC-Q101 qualified
•
Fast-recovery body diode
•
Lower RDS(on) per area vs previous generation
•
Low gate charge, input capacitance and resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STP30N65DM6AG
Product summary
Order code
STP30N65DM6AG
Marking
30N65DM6
Package
TO-220
Packing
Tube
Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6
Power MOSFET in a TO-220 package
STP30N65DM6AG
Datasheet
DS13373 - Rev 2 - June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com


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