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STP60N043DM9 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP60N043DM9
Description  N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP60N043DM9 Datasheet(HTML) 1 Page - STMicroelectronics

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1
2
3
TO-220
TAB
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
ID
STP60N043DM9
600 V
43 mΩ
56 A
•
Fast-recovery body diode
•
Worldwide best RDS(on) per area among silicon-based fast recovery devices
•
Low gate charge, input capacitance and resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
Applications
•
Power supplies and converters
•
LLC resonant converter
Description
This N-channel Power MOSFET is based on the most innovative super-junction
MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring
very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based
DM9 technology benefits from a multi-drain manufacturing process which allows
an enhanced device structure. The fast-recovery diode featuring very low recovery
charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power
MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS
phase-shift converters.
Product status link
STP60N043DM9
Product summary
Order code
STP60N043DM9
Marking
60N043DM9
Package
TO-220
Packing
Tube
N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET
in a TO-220 package
STP60N043DM9
Datasheet
DS13931 - Rev 2 - September 2022
For further information contact your local STMicroelectronics sales office.
www.st.com


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