STP60N043DM9 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STP60N043DM9

Description	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

175

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 56 A

1.6

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 16. Test circuit for inductive

load switching and diode recovery times)

170

Qrr

Reverse recovery charge

1.22

μC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 16. Test circuit for inductive

load switching and diode recovery times)

237

Qrr

Reverse recovery charge

2.68

μC

IRRM

Reverse recovery current

20.5

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STP60N043DM9

Electrical characteristics

DS13931 - Rev 2

page 4/12

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