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STP65N045M9 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP65N045M9
Description  N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP65N045M9 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG251120210953SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1µs
tp =10µs
tp =100µs
tp =1ms
tp =10ms
V(BR)DSS
Operation
in
this
area
is limited
by
RDS(on)
Single pulse
TJ ≤ 150 °C
TC = 25 °C
RDS(on) max.
IDM
Figure 2. Maximum transient thermal impedance
GADG251120210954ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ZthJC
(°C/W)
ton
T
duty = ton / T
RthJC = 0.51 °C/W
duty=0.5
0.4
0.3 0.2
Single pulse
0.05
0.1
Figure 3. Typical output characteristics
GADG251120210954OCH
150
120
90
60
30
0
0
2
4
6
8
10
12
ID
(A)
VDS (V)
VGS = 8, 9, 10 V
7 V
6 V
Figure 4. Typical transfer characteristics
GADG141220210753TCH
150
120
90
60
30
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 14 V
Figure 5. Typical gate charge characteristics
GADG251120210955QVG
375
300
225
150
75
0
10
8
6
4
2
0
0
20
40
60
80
VDS
(V)
VGS
(V)
Qg (nC)
Qg
Qgs
Qgd
VDS
VGS
VDD = 400 V, ID = 28 A
Figure 6. Typical drain-source on-resistance
GADG251120210959RID
42
41
40
39
38
37
0
10
20
30
40
50
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STP65N045M9
Electrical characteristics (curves)
DS13506 - Rev 4
page 5/12



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