STP65N045M9 datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STP65N045M9

Description	N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Figure 7. Typical capacitance characteristics

GADG251120210958CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

Ciss

Coss

Crss

f = 1 MHz

Figure 8. Typical output capacitance stored energy

GADG251120211015EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 9. Normalized gate threshold vs temperature

GADG251120211003VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 µA

Figure 10. Normalized on-resistance vs temperature

GADG251120211003RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

Figure 11. Normalized breakdown voltage vs temperature

GADG251120211004BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

VGS = 10 V

Figure 12. Typical reverse diode forward characteristics

GADG251120211006SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STP65N045M9

Electrical characteristics (curves)

DS13506 - Rev 4

page 6/12

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