STU5N65M6 datasheet(3/12 Pages) STMICROELECTRONICS

Part #	STU5N65M6

Description	N-channel 650 V, 1.15 typ., 4 A MDmesh™ M6 Power MOSFET in an IPAK package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 12 page

STU5N65M6

Electrical ratings

DocID029218 Rev 2

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

2.5

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 4 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V

(3)VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.78

°C/W

Rthj-amb

Thermal resistance junction-ambient

100

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

Eas

Single pulse avalanche energy (starting Tj=25°C, ID= IAR, VDD=50 V)

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