STWA65N65DM2AG datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STWA65N65DM2AG

Description	Automotive-grade N-channel 650 V, 42 m typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STWA65N65DM2AG

650 V

50 mΩ

60 A

446 W

•

AEC-Q101 qualified

•

Fast-recovery body diode

•

Extremely low gate charge and input capacitance

•

Low on-resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STWA65N65DM2AG

Product summary

Order code

STWA65N65DM2AG

Marking

65N65DM2

Package

TO-247 long leads

Packing

Tube

Automotive-grade N-channel 650 V, 42 mΩ typ., 60 A MDmesh DM2

Power MOSFET in a TO-247 long leads package

STWA65N65DM2AG

Datasheet

DS12757 - Rev 3 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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STWA65N65DM2AG Datasheet(PDF) 1 Page - STMicroelectronics

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