STWA67N60DM6 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STWA67N60DM6

Description	N-channel 600 V, 45 m typ., 58 A MDmesh DM6 Power MOSFET in a TO‑247 long leads package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

190

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 58 A

1.6

trr

Reverse recovery time

ISD = 47.5 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

125

Qrr

Reverse recovery charge

0.6

µC

IRRM

Reverse recovery current

9.6

trr

Reverse recovery time

ISD = 47.5 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

228

Qrr

Reverse recovery charge

2.34

µC

IRRM

Reverse recovery current

20.5

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STWA67N60DM6

Electrical characteristics

DS12933 - Rev 4

page 4/12

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