02/13/03

www.irf.com

1

IRLR2908

IRLU2908

Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET

utilizes the latest processing techniques to achieve extremely low on-resistance per silicon

area. Additional features of this HEXFET power MOSFET are a 175°C junction operating

temperature, low R

θJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of other applications.\

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave

soldering techniques. The straight lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount

applications.

S

D

G

D-Pak

IRLR2908

AUTOMOTIVE MOSFET

Features

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Dynamic dv/dt Rating

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

PD - 94501

I-Pak

IRLU2908

Absolute Maximum Ratings

Parameter

Units

A

Pulsed Drain Current

™

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally Limited)

d

mJ

Single Pulse Avalanche Energy Tested Value

i

Avalanche Current

™

A

Repetitive Avalanche Energy

h

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

Operating Junction and

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.3

°C/W

Junction-to-Ambient (PCB Mount)

jÃ

–––

40

Junction-to-Ambient

–––

110

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

Max.

39

28

150

30

300 (1.6mm from case )

-55 to + 175

2.3