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STF22N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF22N60DM6
Description  N-channel 600 V, 200 m typ., 15 A, MDmesh DM6 Power MOSFET in a TO‑220FP package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF22N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG230920191112SOA
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
IDM
Operation
in
this
area
is limited
by
R
DS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 150 °C
VGS=10 V
tp =100 µs
tp =10 µs
tp =1 ms
V(BR)DSS
tp =1 µs
tp =10 ms
Figure 2. Maximum transient thermal impedance
GADG230920191112ZTH
10 0
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ton
T
duty = ton / T
RthJ-C = 4.3 (°C/W)
ZthJ-C
(°C/W)
duty=0.5
0.1
0.4
0.05
0.3
0.2
Figure 3. Typical output characteristics
GADG110220191516OCH
36
30
24
18
12
6
0
0
3
6
9
12
15
18
ID
(A)
VDS (V)
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9 V
VGS = 10 V
Figure 4. Typical transfer characteristics
GADG110220191516TCH
36
30
24
18
12
6
0
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 18 V
Figure 5. Typical gate charge characteristics
GADG110220191517QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS
(V)
VGS
(V)
Qg (nC)
VDS
Qg
Qgd
Qgs
VDD = 480 V, ID = 15 A
Figure 6. Typical capacitance characteristics
GADG110220191516CVR
10 3
10 2
10 1
10 0
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
STF22N60DM6
Electrical characteristics (curves)
DS13120 - Rev 2
page 5/12



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