STF33N60DM6 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STF33N60DM6

Description	N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 25 A

1.6

trr

Reverse recovery time

ISD = 25 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

105

Qrr

Reverse recovery charge

0.47

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 25 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

210

Qrr

Reverse recovery charge

1.68

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

STF33N60DM6

Electrical characteristics

DS12937 - Rev 2

page 4/12

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