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18N60M2 Datasheet(PDF) 6 Page - STMicroelectronics |
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18N60M2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Figure 7. Capacitance variations C 100 10 1 0.1 10 VDS (V) (pF) 1 100 Ciss Coss Crss 1000 AM15841v1 Figure 8. Normalized gate threshold voltage vs. temperature GIPG070815BQ6KLVTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GIPG070815BQ6KLRON 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 10. Source-drain diode forward characteristics VSD 0 2 ISD(A) (V) 4 0.0 0.2 0.4 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.8 6 1.0 1.2 1.4 8 10 12 AM15842v1 Figure 11. Normalized V(BR)DSS vs temperature GIPG070815BQ6KLBDV 1.12 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 12. Output capacitance stored energy Eoss 0 VDS (V) (µJ) 200 100 500 0 1 2 3 300 400 600 4 5 6 AM15843v1 STFU18N60M2 Electrical characteristics (curves) DS10930 - Rev 3 page 6/12 |
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