STL26N65DM2 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STL26N65DM2

Description	N-channel 650 V, 0.182 typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PowerFLAT™ 8x8 HV

NG1DS2PS34D5Z

Drain(5)

Gate(1)

Driver

source (2)

Power

source (3, 4)

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STL26N65DM2

650 V

0.206 Ω

20 A

140 W

•

Fast-recovery body diode

•

Extremely low gate charge and input capacitance

•

Low on-resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STL26N65DM2

Product summary

Order code

STL26N65DM2

Marking

26N65DM2

Package

PowerFLAT™ 8x8 HV

Packing

Tape and reel

N-channel 650 V, 0.182 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET

in a PowerFLAT™ 8x8 HV package

STL26N65DM2

Datasheet

DS12623 - Rev 1 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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STL26N65DM2 Datasheet(PDF) 1 Page - STMicroelectronics

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