STL26N65DM2 datasheet(4/15 Pages) STMICROELECTRONICS

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 20 A

1.6

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

100

Qrr

Reverse recovery charge

0.365

µC

IRRM

Reverse recovery current

7.3

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

200

Qrr

Reverse recovery charge

1.39

µC

IRRM

Reverse recovery current

13.9

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±1 mA, ID = 0 A

±30

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

STL26N65DM2

Electrical characteristics

DS12623 - Rev 1

page 4/15

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