STO67N60DM6 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STO67N60DM6

Description	N-channel 600 V, 48 m typ., 58 A MDmesh DM6 Power MOSFET in a TO‑LL package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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TO-LL type A2

Drain (TAB)

Gate(1)

Driver

source (2)

Power

source (3, 4, 5, 6, 7,8)

N-chG1DS2PS345678DTABZ

Features

Order code

VDS

RDS(on) max.

ID

STO67N60DM6

600 V

59 mΩ

58 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STO67N60DM6

Device summary

Order code

STO67N60DM6

Marking

67N60DM6

Package

TO-LL type A2

Packing

Tape and reel

N-channel 600 V, 48 mΩ typ., 58 A MDmesh DM6 Power MOSFET

in a TO

‑LL package

STO67N60DM6

Datasheet

DS13219 - Rev 5 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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STO67N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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