DS31224 Rev. 4 - 2

2 of 4

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DEMD48

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Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Cut-Off Current

ICBO

-

-

100

nA

VCB = 50V, IE = 0A

Collector-Emitter Cut-Off Current

ICEO

-

-

1

50

μA

VCE = 30V, IB = 0A

B

VCE = 30V, IB = 0A, T

B

A = 150°C

Emitter-Base Cut-Off Current

IEBO

-

-

90

μA

VEB = 5V, IC = 0A

VI(off)

-

1.2

0.8

V

VCE = 5V, IO = 100μA

Input Voltage

VI(on)

3

1.6

-

V

VCE = 0.3V, IO = 2mA

Collector-Emitter Saturation Voltage

VCE(SAT)

-

-

0.15

V

IC/IB = 10mA/0.5mA

B

DC Current Gain

hFE

80

-

-

-

VCE = 5V, IC = 5mA

Input Resistance

R1

33

47

61

k

Ω

-

Resistance Ratio

R2/R1

0.8

1

1.2

-

-

Collector Capacitance

CC

-

-

2.5

pF

VCB = 10V, IE = 0, f = 1MHz

Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Cut-Off Current

ICBO

-

-

-100

nA

VCB = -50V, IE = 0A

Collector-Emitter Cut-Off Current

ICEO

-

-

-1

-50

μA

VCE = -30V, IB = 0A

B

VCE = -30V, IB = 0A, T

B

A = 150°C

Emitter-Base Cut-Off Current

IEBO

-

-

-180

μA

VEB = -5V, IC = 0A

VI(off)

-

-0.6

-0.5

V

VCC = -5V, IO = -100μA

Input Voltage

VI(on)

-1.1

-0.75

-

V

VO = -0.3V, IO = -5mA

Collector-Emitter Saturation Voltage

VCE(SAT)

-

-

-0.1

V

IC/IB = -5mA/-0.25mA

B

DC Current Gain

hFE

100

-

-

-

VCE = -5V, IC = -10mA

Input Resistance

R1

1.54

2.2

2.86

k

Ω

-

Resistance Ratio

R2/R1

17

21

26

-

-

Collector Capacitance

CC

-

-

3.0

pF

VCB = -10V, IE = 0, f = 1MHz

1

10

100

1,000