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TF8205 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TF8205 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 6 page  www.sztuofeng.com Dec 2021 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on) Typ ID 20V 20mΩ @ 4.5V 5.0A 25mΩ @ 2.5V TF8205 FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package Dual N-Channel MOSFET APPLICATION Battery Protection Load Switch Power Management ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 V Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 18 A Thermal Resistance from Junction to Ambient (note 2) RθJA 85 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ V TF8205 Max 5.0 MARKING Equivalent Circuit Y :year code W :week code TSSOP-8 TF8205 ZYWJ TSSOP-8 Plastic-Encapsulate MOSFETS |
Similar Part No. - TF8205 |
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Similar Description - TF8205 |
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