00.5

1

1.522.5

33.5

4

0

0.5

1

1.5

2

2.5

3

3.5

P (W)

= 180

o

= 120

o

=90

o

=60

o

=30

o

DC

I

(A)

T(AV)

360

O

Fig.1 : Maximum average power dissipation ver-

sus average on-state current.

0

10203040

5060708090 100 110 120 130

0

1

2

3

4

5

I

(A)

T(AV)

= 180

o

DC

Tcase ( C)

o

Fig.3 : Average on-state current versus case tem-

perature.

Igt

Ih

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

-40

-20

0

20

40

60

80

100

120

140

Igt[Tj]

Igt[Tj=25 C]

o

Ih[Tj]

Ih[Tj=25 C]

o

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

0

20

40

60

80

100

120

140

0

0.5

1

1.5

2

2.5

3

3.5

-110

-115

-120

-125

P (W)

Tcase ( C)

o

Rth = 0 C/W

5C/W

10 C/W

15 C/W

o

o

o

o

= 180

o

Tamb ( C)

o

Fig.2 : Correlation between maximum average

power dissipation and maximum allowable tem-

perature (Tamb and Tcase) for different thermal

resistances heatsink + contact.

1E-3

1E-2

1E-1

1E +0

1 E +1

1E +2 5 E+2

0.01

0.1

1

Zth/Rth

Zt h( j-c )

Zt h( j-a )

tp (s )

Fig.4 : Relative variation of thermal impedance

versus pulse duration.

1

10

100

100 0

0

10

20

30

40

50

60

Tj initial = 25 C

o

Number of cycles

I

(A)

TSM

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

®

S0402xH

3/5