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STM4433 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STM4433 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  30 P-Channel E nhancement Mode MOS FE T ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ TJ=125 C -Pulsed ID -30 -1.7 2.5 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 50 /W C S T M4433 a a a a b 1 2 3 4 8 7 6 5 S S S G D D D D 5 1 S amHop Microelectronics C orp. S urface Mount Package. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -6A 35 @ V GS = -10V 50 @ V GS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S O-8 1 -30V 20 -6 MAY . 12 2004 |
Similar Part No. - STM4433 |
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Similar Description - STM4433 |
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