STF10NK60Z datasheet(3/13 Pages) STMICROELECTRONICS

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STF10NK60Z(045Y)

Electrical ratings

Doc ID 16548 Rev 1

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

10(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

5.7 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

36 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.28

W/°C

Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

4000

dv/dt (3)

ISD < 10A, di/dt < 200A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three

leads to external heat sink (t=1

s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

3.6

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj=25 °C, ID=IAR, VDD= 50 V)

300

EAR

Repetitive avalanche energy

(pulse width limited by Tj max)

3.5

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