STF10N80K5, STFU10N80K5

Electrical ratings

DocID026564 Rev 5

3/17

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID(1)

Drain current (continuous) at TC = 25 °C

9

A

ID(1)

Drain current (continuous) at TC = 100 °C

6

A

IDM(2)

Drain current pulsed

36

A

PTOT

Total dissipation at TC = 25 °C

30

W

IAR

Max. current during repetitive or single pulse avalanche (pulse

width limited by Tjmax.)

3

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS,

VDD = 50 V)

130

mJ

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD≤ 9 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS

(4)VDS ≤ 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W