Electrical characteristics

STF10N80K5, STFU10N80K5

4/17

DocID026564 Rev 5

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C (1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 4.5 A

0.470

0.600

Ω

Notes:

(1)Defined by design, no subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

635

-

pF

Coss

Output capacitance

-

53

-

pF

Crss

Reverse transfer

capacitance

-

0.8

-

pF

Co(tr)(1)

Equivalent capacitance

time related

VDS = 0 to 640 V, VGS = 0 V

-

85

-

pF

Co(er)(2)

Equivalent capacitance

energy related

34

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz , ID = 0 A

-

6

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 9 A

VGS = 10 V

See Figure 16: "Test circuit for

gate charge behavior"

-

22

-

nC

Qgs

Gate-source charge

-

5.5

-

nC

Qgd

Gate-drain charge

-

13.2

-

nC

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS.