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STGWA40IH65DF Datasheet(PDF) 5 Page - STMicroelectronics |
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STGWA40IH65DF Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature IGBT100820181013PDT 240 160 80 0 -50 0 50 100 150 PTOT (W) TC (°C) VGE = 15 V, TJ = 175 °C Figure 2. Collector current vs case temperature IGBT100820181014CCT 80 60 40 20 0 -50 0 50 100 150 IC (A) TC (°C) VGE = 15 V, TJ = 175 °C Figure 3. Output characteristics (TJ = 25 °C) IGBT080820181006OC25 100 80 60 40 20 0 0 1 2 3 4 5 IC (A) VCE (V) VGE = 15 V 11 V 13 V 9 V 7 V Figure 4. Output characteristics (TJ = 175 °C) IGBT080820181006OC175 100 80 60 40 20 0 0 1 2 3 4 5 IC (A) VCE (V) VGE = 15 V 11 V 13 V 9 V 7 V Figure 5. VCE(sat) vs junction temperature IGBT100820181015VCET 2.5 2 1.5 1 -50 0 50 100 150 VCE(sat) (V) TJ (°C) VGE = 15 V IC = 80 A IC = 40 A IC = 20 A Figure 6. VCE(sat) vs collector current IGBT080820181006VCEC 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 VCE(sat) (V) IC (A) VGE = 15 V TJ = 175 °C TJ = 25 °C TJ = -40 °C STGWA40IH65DF Electrical characteristics (curves) DS11801 - Rev 3 page 5/15 |
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