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STGWA40IH65DF Datasheet(PDF) 6 Page - STMicroelectronics |
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STGWA40IH65DF Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Forward bias safe operating area IGBT080820181007FSOA 10 2 10 1 10 0 10 0 10 1 10 2 IC (A) VCE (V) tp = 1 µs tp = 10 µs tp = 100 µs tp = 1 ms Single pulse, TC = 25 °C, TJ ≤ 175 °C, VGE = 15 V Figure 8. Transfer characteristics IGBT100820181015TCH 100 80 60 40 20 0 5 6 7 8 9 10 IC (A) VGE (V) VCE = 6 V TJ = 25 °C TJ = 175 °C Figure 9. Diode VF vs forward current IGBT080820181007DVF 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 VF (V) IF (A) TJ = 25 °C TJ = -40 °C TJ = 175 °C Figure 10. Normalized VGE(th) vs junction temperature IGBT100820181016NVGE 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 VGE(th) (Norm.) TJ (°C) VCE = VGE E IC = 1 mA Figure 11. Normalized V(BR)CES vs junction temperature IGBT100820181016NVBR 1.08 1.04 1.00 0.96 0.92 -50 0 50 100 150 V(BR)CES (Norm.) TJ (°C) IC = 250 μA Figure 12. Capacitance variations IGBT080820181008CVR 10 3 10 2 10 1 10 -1 10 0 10 1 10 2 C (pF) VCE (V) CIES COES CRES STGWA40IH65DF Electrical characteristics (curves) DS11801 - Rev 3 page 6/15 |
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