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AP40T03GS Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP40T03GS Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 4 page  Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 25mΩ ▼ Fast Switching ID 28A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Continuous Drain Current, VGS @ 10V 24 Pulsed Drain Current 1 95 Gate-Source Voltage ±25 Continuous Drain Current, VGS @ 10V 28 Parameter Rating Drain-Source Voltage 30 200331053-1/4 AP40T03GS/P Pb Free Plating Product G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03J) are available for low-profile applications. G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P) |
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