STP260N4F7 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STP260N4F7

4/13

DocID028290 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID

= 250 μA

IDSS

Zero gate voltage drain current

VGS= 0 V, VDS= 40 V

µA

VGS= 0 V, VDS= 40 V,

TC= 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 60 A

1.8

2.2

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS= 25 V,

f = 1 MHz

5600

Coss

Output capacitance

2400

Crss

Reverse transfer capacitance

Total gate charge

VDD = 20 V, ID = 120 A,

VGS = 10 V

(see Figure 14: "Test

circuit for gate charge

behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20V, ID = 60 A,

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test

circuit for resistive load

switching times" and

Figure 18: "Switching

time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

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