Electrical characteristics

STP4LN80K5

4/13

DocID027818 Rev 2

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage

VDD = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1 A

2.1

2.6

Ω

Notes:

(1) Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

122

-

pF

Coss

Output capacitance

-

11

-

pF

Crss

Reverse transfer capacitance

-

0.3

-

pF

Co(tr)(1)

Equivalent capacitance time

related

VDS = 0 to 640 V,

VGS = 0 V

-

23

-

pF

Co(er)(2)

Equivalent capacitance energy

related

-

9

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz, Id = 0 A

-

18

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 2.5 A

VGS= 10 V

(see Figure 15: "Test

circuit for gate charge

behavior")

-

3.7

-

nC

Qgs

Gate-source charge

-

1

-

nC

Qgd

Gate-drain charge

-

2.2

-

nC

Notes:

(1) Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

(2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS.