STP9N80K5, STW9N80K5

Electrical characteristics

DocID028461 Rev 3

5/16

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

7

A

ISDM(1)

Source-drain current

(pulsed)

-

28

A

VSD(2)

Forward on voltage

ISD = 7 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 7 A, di/dt = 100 A/µs,

VDD = 60 V

See Figure 17: "Test circuit for

inductive load switching and

diode recovery times"

-

292

ns

Qrr

Reverse recovery

charge

-

2.66

µC

IRRM

Reverse recovery

current

-

18.2

A

trr

Reverse recovery time

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

See Figure 17: "Test circuit for

inductive load switching and

diode recovery times"

-

477

ns

Qrr

Reverse recovery

charge

-

3.91

µC

IRRM

Reverse recovery

current

-

16.4

A

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS= ± 1mA,ID= 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.