Electrical characteristics

STP9N80K5, STW9N80K5

4/16

DocID028461 Rev 3

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 3.5 A

0.73

0.90

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

340

-

pF

Coss

Output capacitance

-

37

-

pF

Crss

Reverse transfer capacitance

-

0.65

-

pF

Co(tr)(1)

Equivalent capacitance time

related

VGS = 0 V, VDS = 0 to 640 V

-

61

-

pF

Co(er)(2)

Equivalent capacitance

energy related

22

pF

Rg

Intrinsic gate resistance

f = 1 MHz open drain

-

7

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 7 A

VGS= 10 V

See (Figure 16: "Test circuit

for gate charge behavior")

-

12

-

nC

Qgs

Gate-source charge

-

3.8

-

nC

Qgd

Gate-drain charge

-

6.7

-

nC

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID =3.5 A, RG

= 4.7 Ω

VGS = 10 V

See (Figure 15: "Test circuit for

resistive load switching times" and

Figure 20: "Switching time

waveform")

-

11

-

ns

tr

Rise time

-

5.7

-

ns

td(off)

Turn-off delay time

-

65.3

-

ns

tf

Fall time

-

13.6

-

ns