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TCR3UG18B Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TCR3UG18B Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 18 page ![]() TCR3UG series 2022-01-11 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 6 10. Dropout voltage (IOUT = 300 mA, CIN = COUT = 1 μF) Note 10: Tj = -40 to 85 °C. This parameter is warranted by design Output voltages Symbol Min Typ. Tj = 25°C Max (Note 10) Unit 0.8 V ≤ VOUT < 0.9 V VDO ― 1025 1257 mV 0.9 V ≤ VOUT < 1.0 V ― 930 1157 1.0 V ≤ VOUT < 1.1 V ― 835 1057 1.1 V ≤ VOUT < 1.2 V ― 740 957 1.2 V ≤ VOUT < 1.3 V ― 660 857 1.3 V ≤ VOUT < 1.5 V ― 580 757 1.5 V ≤ VOUT < 1.6 V ― 450 617 1.6 V ≤ VOUT < 1.8 V ― 400 537 1.8 V ≤ VOUT < 2.0 V ― 335 457 2.0 V ≤ VOUT < 2.5 V ― 260 405 2.5 V ≤ VOUT < 3.0 V ― 185 327 3.0 V ≤ VOUT < 3.6 V ― 140 273 3.6 V ≤ VOUT < 4.5 V ― 130 228 4.5 V ≤ VOUT ≤ 5.0 V ― 120 195 |
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