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ACS108-8SA Datasheet(PDF) 6 Page - STMicroelectronics |
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ACS108-8SA Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt) [T ] / (dI/dt) [T =125 °C] c c j j 0.0 0.5 1.0 1.5 2.0 2.5 25 35 45 55 65 75 85 95 105 115 125 T (°C) j Figure 10. Relative variation of static dV/dt immunity versus junction temperature (typical values above 5 kV/µs) dV/dt [ Tj] / dV/dt [ Tj=125°C] 0 1 2 3 4 5 25 50 75 100 125 VD=VR=536V Tj(°C) Figure 11. Relative variation of leakage current versus junction temperature 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;800 V] VDRM=VRRM=600 V VDRM=VRRM=800 V Tj(°C) Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus (dV/dt)c (dI/dt)c [ (dV/dt) c ] / Specified(dI/dt)c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10.0 100.0 Tj =125 °C (dV/dt) c (V/µs) ACS108-8SA Characteristics (curves) DS12901 - Rev 1 page 6/13 |
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