STB13N80K5, STF13N80K5, STP13N80K5,

STW13N80K5

Electrical characteristics

DocID024348 Rev 4

5/23

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID = 6 A,

RG

= 4.7 Ω, VGS = 10 V

(see Figure 21: "Test circuit

for resistive load switching

times" and Figure 26:

"Switching time waveform")

-

16

-

ns

tr

Rise time

-

16

-

ns

td(off)

Turn-off delay time

-

42

-

ns

tf

Fall time

-

16

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

14

A

ISDM(1)

Source-drain current

(pulsed)

-

56

A

VSD(2)

Forward on voltage

ISD = 12 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD

= 12 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 23: "Test circuit

for inductive load switching

and diode recovery times")

-

406

ns

Qrr

Reverse recovery charge

-

5.7

μC

IRRM

Reverse recovery current

-

28

A

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/

μs,

VDD= 60 V, Tj= 150 °C

(see Figure 23: "Test circuit

for inductive load switching

and diode recovery times")

-

600

ns

Qrr

Reverse recovery charge

-

7.9

μC

IRRM

Reverse recovery current

-

26

A

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS= ±1 mA, ID= 0 A

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.