STW13N80K5 datasheet(3/23 Pages) STMICROELECTRONICS

3 / 23 page

STB13N80K5, STF13N80K5, STP13N80K5,

STW13N80K5

Electrical ratings

DocID024348 Rev 4

3/23

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, TO-220,

TO-247

TO-220FP

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

12 (1)

Drain current (continuous) at TC = 100 °C

7.6

7.6 (1)

IDM(2)

Drain current (pulsed)

48 (1)

PTOT

Total dissipation at TC = 25 °C

190

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat-sink

(t = 1 s, TC = 25 °C)

2500

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Limited by package.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.

(4)VDS ≤ 640 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-220FP

TO-247

Rthj-case

Thermal resistance junction-case

0.66

3.57

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

148

STW13N80K5 Datasheet(PDF) 3 Page - STMicroelectronics

STW13N80K5 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Datasheet Download

Link URL