STW70N65M2 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STW70N65M2

Description	N-channel 650 V, 0.039 Ω typ., 63 A MDmesh™ M2 Power MOSFET in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STW70N65M2

Electrical characteristics

DocID028962 Rev 1

5/12

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

252

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 63 A

1.6

trr

Reverse recovery time

ISD = 63 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

584

Qrr

Reverse recovery charge

14.5

µC

IRRM

Reverse recovery current

50.5

trr

Reverse recovery time

ISD = 63 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

725

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

55.5

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%

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