STW8N120K5 datasheet(2/13 Pages) STMICROELECTRONICS

Part #	STW8N120K5

Description	N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 13 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

3.5

IDM(1)

Drain current pulsed

PTOT

Total dissipation at TC = 25 °C

130

dv/dt(2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 6 A, di/dt ≤ 100 A/μs, VDS peak ≤ V(BR)DSS

3. VDS ≤ 960 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.96

°C/W

Rthj-amb

Thermal resistance junction-ambient

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

1.7

EAS

Single-pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

415

STW8N120K5

Electrical ratings

DS12549 - Rev 3

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