Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

6

A

ISDM(1)

Source-drain current (pulsed)

-

12

A

VSD(2)

Forward on voltage

ISD = 5 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 5 A, VDD = 60 V,

di/dt = 100 A/µs

(see Figure 15. Test circuit for

inductive load switching and

diode recovery times)

-

327

ns

Qrr

Reverse recovery charge

-

3

µC

IRRM

Reverse recovery current

-

18.4

A

trr

Reverse recovery time

ISD = 5 A, VDD = 60 V,

di/dt = 100 A/µs, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and

diode recovery times)

-

485

ns

Qrr

Reverse recovery charge

-

3.9

µC

IRRM

Reverse recovery current

-

16

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±1 mA, ID = 0 A

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

STW8N120K5

Electrical characteristics

DS12549 - Rev 3

page 4/13