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APT100S20B Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT100S20B Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page  12 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A TO-247 1 2 STATIC ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package or Surface Mount D3PAK Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT APPLICATIONS • Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode • Uninterruptible Power Supply (UPS) • 48 Volt Output Rectifiers • High Speed Rectifiers HIGH VOLTAGE SCHOTTKY DIODE Symbol V F I RM C T UNIT Volts mA pF MIN TYP MAX .89 .95 1.06 .76 2 40 470 Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 100A I F = 200A I F = 100A, TJ = 125°C V R = 200V V R = 200V, TJ = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current 1 (T C = 125°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) 1 Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 50mH) Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM T J,TSTG T L E VAL UNIT Volts Amps °C mJ APT100S20B 200 120 318 1000 -55 to 150 300 100 Microsemi Website - http://www.microsemi.com |
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