MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

RF POWER MOSFETs

N- CHANNEL ENHANCEMENT MODE

200V 300W

45MHz

The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull

scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized

for both linear and high efficiency classes of operation.

•

Output Power = 300 Watts.

•

Gain = 16dB (Class AB)

•

Efficiency = 75% (Class C)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(ON)

I

DSS

I

GSS

g

fs

V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

)

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

MIN

TYP

MAX

1000

0.90

25

250

±100

3.3

7

9

24

UNIT

Volts

ohms

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

R

θJC

T

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Power Dissipation @ T

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF466A_B

1000

1000

13

±30

357

0.35

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

ARF466A

ARF466B

TO-264

Common

Source

G

D

S