MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

g

fs1

V

∆V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Forward Transconductance Match Ratio (V

Gate Threshold Voltage (V

Gate Threshold Voltage Match (V

MIN

TYP

MAX

500

4

25

250

±100

46

0.9

1.1

35

0.1

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

(each device)

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF473

500

10

±30

500

-55 to 200

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

165 V 300 W 150 MHz

The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage

push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

•

Output Power = 300 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 50%

for Superior Ruggedness.

ARF473

Common Source

Push-Pull Pair

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θCS

Characteristic

Junction to Case

MIN

TYP

MAX

0.35

0.1

UNIT

°C/W

ARF473

G

G

D

S

(Flange)

D