DME800

800 Watts, 50 Volts

Pulsed Avionics 1025 to 1150 MHz

GENERAL DESCRIPTION

The DME800 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width

and duty required for DME applications.

The device has gold thin-film

metalization for proven highest MTTF. The transistor includes input and output

prematch for broadband capability. Low thermal resistance package reduces

junction temperature, extends life.

CASE OUTLINE

55ST-1

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

2500 W

Maximum Voltage and Current

65 V

3 V

50 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out

Pulse Width = 10 µs,

800

1000

W

Power Gain

9.0

10.0

dB

Collector Efficiency

40

%

Return Loss

-9

dB

Tr

Rise Time

200

ns

Pd

Pulse Droop

0.7

dB

VSWR

Pin = 100 Watts

Vcc = 50 Volts

F = 1025-1150 MHz

Long Term Duty Factor = 1%

F = 1025 MHz

3.0:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

3.5

V

65

V

DC – Current Gain

20

Thermal Resistance

0.04

0.06

°C/W

NOTES: 1. At rated output power and pulse conditions

2. At rated pulse conditions

Issued June 2003

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.