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MS1001 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1001 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM DESCRIPTION: DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 20 A PD Total Dissipation 270 W Tj Junction Temperature 200 º C TSTG Storage Temperature -65 to +150 º C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 °°C/W Features Features • 30 MHz • 12.5 VOLTS • IMD = -32 dBc • INFINITE VSWR CAPABILITY @ RATED CONDITIONS • P OUT = 75 WATTS • G P = 13dB MINIMUM • COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
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