MS1011

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DESCRIPTION:

The MS1011 is a 50 V epitaxial silicon NPN planar transistor

designed primarily for SSB and VHF communications. This device

utilizes emitter ballasting for improved ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

110

V

Collector-Emitter Voltage

55

V

Emitter-Base Voltage

4

V

Device Current

40

A

Power Dissipation

330

W

Junction Temperature

+200

°°C

Storage Temperature

–65 to +150

°°C

THERMAL DATA

Junction-Case Thermal Resistance

0.4

°°C/W

Features

Features

• OPTIMIZED FOR SSB

• 30 MHz

• 50 VOLTS

• IMD — 30 dB

• GOLD METALLIZATION

• COMMON EMITTER

• P

RF AND MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855