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MS1582 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1582 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS1582 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: DESCRIPTION: The MS1582 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector - Base Voltage 45 V VCEO Collector - Emitter Voltage 30 V VEBO Emitter - Base Voltage 3.0 V IC Device Current 8 A PDISS Power Dissipation 135 W TJ Junction Temperature +200 º C TSTG Storage Temperature -65 to +150 º C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.3 °°C/W Features Features • 470 - 860 MHz • 28 VOLTS • GOLD METALIZATION • P OUT = 25 WATT • G P = 9.0 dB MINIMUM • INTERNAL INPUT MATCHING • COMMON EMITTER CONFIGURATION 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS |
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